Toward a Germanium Laser for Integrated Silicon Photonics

By Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, J. Michel. IEEE Journal of Selected Topics in Quantum Electronics, 2010

140 citations recorded by the source corpus.

It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a408df620105113cc372b822bf2b350f188b9eac

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Silicon Photonic Integration Platform—Have We Found the Sweet Spot? (2014, background): “Although direct monolithic growth on silicon of III–V direct bandgap semiconductors [92] or strained germanium [93] are currently heavily being investigated, these approaches are still in their infancy and considerable improvement is needed before efficient lasers can be demonstrated using these tec”
Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers (2010, unknown): “an n-type doped Ge laser has been reported [6], [7].”