A ferroelectric memristor.
By André Chanthbouala, Vincent Garcia, R. Cherifi, K. Bouzehouane, Stephane Fusil, X. Moya, S. Xavier, Hiroyuki Yamada, C. Deranlot, N. Mathur and 3 more. Nature Materials, 2012
1,090 citations recorded by the source corpus.
Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
Subfields: Cognitive Neuroscience, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/91908a03df08eca819b9020a83e3883e9324f714
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Cognitive Neuroscience
- Giacomo Indiveri
- H. Philip Wong
- Daniele Ielmini
- Timothée Masquelier
- Shih-Chii Liu
- B. Linares‐Barranco
- T. Serrano‐Gotarredona
- T. Prodromakis
In Electrical and Electronic Engineering
- Daniele Ielmini
- Giacomo Indiveri
- H. Philip Wong
- Shih-Chii Liu
- B. Linares‐Barranco
- Uwe Schroeder
- T. Serrano‐Gotarredona
- Thomas Mikolajick
Citations in the corpus
- Spintronics: A contemporary review of emerging electronics devices (2016, background): “FTJ has many advantages over MTJ [48,51] as given below.”
- Towards Oxide Electronics: a Roadmap (2019, background): “Alterna-tively electrically-induced polarization switching in ferroelectric tunnel junctions induces large analog resistance variations thanks to the nucleation and propagation of ferroelectric domains in the thin active tunnel barrier [325].”
- Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses (2023, background): “In recent years, 2 T memristors based on ferroelectric materials exhibit a broad prospect in fields such as AI and neural network computing [76, 77].”