Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics

By Yuki Matsuda, Weiqiao Deng, William A. Goddard III. 2010

203 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/913a2a0bf04fbd3f245348d20ac3b32c4998dee4

How researchers see this paper

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In Materials Chemistry

1. Kaustav Banerjee
2. Jiahao Kang
3. Wei David Liu
4. Filippo Giubileo
5. Debdeep Jena
6. A. Di Bartolomeo
7. Hong Li
8. Chuan Xu

Citations in the corpus

• The role of contact resistance in graphene field-effect devices (2017, background): “[169] theoretically analyzed the edge-contact structure realized between graphene and several metals (Ti, Pd, Pt, Cu, Au) showing that it causes an important reduction of the contact”
• Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors (2014, background): “18(a)] to emulate the effect of a long mTMD layer on the left (same as the configuration for metal-graphene edge contacts [21]), while all other atoms (including four layers of metal atoms) are allowed to relax.”