Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
By Dong-hun Kang, Hyuck Lim, Changjung Kim, I. Song, Jae-Chel Park, Young-soo Park, J. Chung. 2007
340 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/8f18c9031aeb8d6265a1b160cd57abb9de28bf49
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Hideo Hosono
- T. Kamiya
- K. Nomura
- John F. Conley
- Jae Kyeong Jeong
- Jang Yeon Kwon
- Elvira Fortunato
- Pedro Barquinha
In Materials Chemistry
- Hideo Hosono
- T. Kamiya
- K. Nomura
- John F. Conley
- Jae Kyeong Jeong
- Jang Yeon Kwon
- Elvira Fortunato
- Pedro Barquinha
In Polymers and Plastics
Citations in the corpus
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, background): “Now the main research focus is to find a way to attain improved long-term stability [16]–[20]; it is thought that sensitivity to adsorption and desorption of oxygen-, hydrogen- and water-related molecules and plasma treatment [21]–[23] are a drawback of AOS.”
- Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors (2011, background): “Electron trapping at the top air-facing surface by absorbed oxygen (O2 ) [4], [8] leads to a positive shift in Vth.”
- Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “exhibited a negative VT shift that is entirely reversible [69], [70].”