Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
By T. Kamiya, K. Nomura, Hideo Hosono. Journal of Display Technology, 2009
641 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/10d45e1957f21f47f939fa202c571fadd85fa9bf
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Citations in the corpus
- Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “The first-principles density-functional theory implies that In–O acts as a mobility enhancer in the a-IGZO system, Zn–O acts as a network former, and Ga–O acts as a carrier suppressor.(5) Ga–O bonding strength is much stronger than In–O and Zn–O bonding strength, meaning that the incorporation of Ga”
- Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model (2009, positive): “The higher for LQ a-IGZO than those for HQ a-IGZO indicates that the LQ a-IGZO have larger structural disorder than the HQ a-IGZO do. We have observed that the LQ a-IGZO have more sparse atomic packing structures (i.e., longer In‐In distances), smaller optical bandgaps, and larger defects [ 35 ], wh”
- Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy (2011, background): “Despite the great progress in the device development [5], [6], there is a little report of the relation between the channel composition and the TFT performance, e.”