Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

By G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H. Dekkers, S. D. Wolf, G. Beaucarne. 2006

446 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Improved parameterization of Auger recombination in silicon (2012, background): “Over the last 10 years the silicon surface passivation was improved continuously, particularly aluminum oxide (Al2O3) resulted in very low surface recombination velocities below 5 cm/s [11-15].”
Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016, methodology): “Al2O3 can be deposited by various techniques, such as ALD leading to the best passivation properties [13]–[15], PECVD [16], [17], inductively coupled plasma (ICP) deposition [18], [19], atmospheric pressure chemical vapor deposition”
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 (2008, methodology): “Recently, it was shown that thin films of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) provide an excellent level of surface passivation on p- and n-type silicon wafers, as determined from carrier lifetime measurements.(11,12) Using lowtemperature plasma-assisted ALD SRVs<13cm/s we”
Beyond Bulk Lifetimes: Insights into Lead Halide Perovskite Films from Time-Resolved Photoluminescence (2016, background): “Similar values have been reported for passivated Si wafers [49,50].”