Giant Electroresistance in Ferroelectric Tunnel Junctions

By M. Zhuravlev, R. Sabirianov, S. Jaswal, E. Tsymbal. 2005

314 citations recorded by the source corpus.

The interplay between the electron transport in metal-ferroelectric-metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charges in metallic electrodes and direct quantum tunneling across a ferroelectric barrier, we calculate the change in the tunneling conductance associated with the polarization switching. We find the conductance change of a few orders of magnitude for metallic electrodes with significantly different screening lengths. This giant electroresistance effect is the consequence of a different potential profile seen by transport electrons for the two opposite polarization orientations.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/88d96cb39d6868b4000c9522a243450a398f7afb

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Citations in the corpus

Ultrathin oxide films and interfaces for electronics and spintronics (2011, background): “[169], assuming that the P(E) loop of the ferroelectric barrier is hard to saturate (as can be inferred from the d33 versus E loop shown in Figure 27) and a polarization value of 2 μC cm−2 [120].”
Ferroelectric tunnel junctions for information storage and processing (2014, background): “Polarization charge effects induce an asymmetric modulation of the electronic potential proﬁle 10,11 .”
Tunnel junctions with multiferroic barriers. (2007, background): “and the influence of ferroelectricity on the tunnelling propertie”
Towards Oxide Electronics: a Roadmap (2019, background): “Indeed, large TER in oxide-based tunnel junctions cannot be quantitatively interpreted by simple electrostatic models involving partial screening of polarization charges at the interfaces [306,307].”
Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion (2016, unknown): “In the case of metal contacts with different relative dielectric constants εe1 and εe2, the polarization field is (Zhuravlev et al., 2005; Pantel and Alexe, 2010) Fdp = P ε0εF εF ls1 εe1 + ls2 εe2 εF ls1 εe1 + ls2 εe2 + d (43) where ls1 and ls2 are the respective screening lengths of the…”