Model of interface states at III-V oxide interfaces

By John Robertson. 2009

152 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/87f2e87756edf016d806a2ac2a12686d49de0cb2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Ru Huang
2. Y. Qiu
3. Qianqian Huang
4. Runsheng Wang

In Electrical and Electronic Engineering

1. Ru Huang
2. Y. Qiu
3. Qianqian Huang
4. Runsheng Wang
5. Shubham Sahay
6. Mamidala Jagadesh Kumar

In Materials Chemistry

1. Ru Huang
2. Y. Qiu
3. Qianqian Huang
4. Runsheng Wang

Citations in the corpus

• A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET (2014, methodology): “Generally, to study the effects of the trap energy and trap distribution on devices two typical high and low Gaussian distributions [26], [27] of interface traps density are incorporated into the interface, respectively, as shown in Fig.”