A subthermionic tunnel field-effect transistor with an atomically thin channel

By Deblina Sarkar, Xuejun Xie, Wei David Liu, Wei Cao, Jiahao Kang, Y. Gong, S. Kraemer, Pulickel M. Ajayan, Kaustav Banerjee. Nature, 2015

887 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4f988e53c8eb8cf98f7d15ad57100e995b95ed2a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. James C. Hone

In Electrical and Electronic Engineering

1. James Towfik Teherani
2. Sekhar Babu Mitta
3. Ankur Nipane
4. James C. Hone
5. Min Sup Choi
6. Won Jong Yoo
7. Changsik Kim
8. Fida Ali

In Materials Chemistry

1. James C. Hone
2. K. Novoselov
3. Herre S. J. van der Zant
4. A. Castellanos-Gómez

Citations in the corpus

• Mixed-dimensional van der Waals heterostructures. (2016, neutral): “c-d, ref.(72) © Macmillan Publishers Ltd.”
• Electrical characterization of 2D materials-based field-effect transistors (2020, background): “Moreover, a sub-thermionic transistor mechanism such as quantum mechanical band-toband tunneling can exhibit a steep turn-on with low SS values far below the thermionic limit [59, 60].”