Interface resistance switching at a few nanometer thick perovskite manganite active layers

By A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. 2006

171 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/84526e91586c7ef7c874a6a8137c13afc94ef727

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Rainer Waser
2. Masakazu Aono
3. Daniele Ielmini
4. Ilia Valov
5. Shimeng Yu
6. Michael N. Kozicki
7. H. Philip Wong
8. Wei Dang Lu

In Electronic, Optical and Magnetic Materials

1. Rainer Waser
2. Masakazu Aono

Citations in the corpus

• Nanoionics-based resistive switching memories. (2007, background): “In a modified model, trapping at interface states is thought to affect the adjacent Schottky barrier at various metal/semiconducting perovskite interface”