Electrical characterization of germanium p-channel MOSFETs

By H. Shang, H. Okorn-Schimdt, John A. Ott, P. Kozłowski, Steven E. Steen, E. Jones, H. P. Wong, W. Hanesch. IEEE Electron Device Letters, 2003

161 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/83d6be13439ebf752f2d6957125d7b4f7ccb475f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Avik W. Ghosh
2. Anisur Rahman
3. Mark S. Lundstrom
4. K. Rumpf
5. P. Granitzer

In Electrical and Electronic Engineering

1. Anisur Rahman
2. Avik W. Ghosh
3. Mark S. Lundstrom
4. Jing Guo
5. Gerhard Klimeck
6. K. Rumpf
7. P. Granitzer

Citations in the corpus

• Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004, background): “Such a situation arises for transistors that employ germanium as a high-mobility channel material [19-21], as well as for alternate wafer orientations of silicon [22].”