Oxide Interfaces—An Opportunity for Electronics

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Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, background): “The recent observation of a high-mobility electron gas at the interfaces between LaAlO3 and SrTiO3 (145) has naturally led to speculation as to novel devices that could exploit this exotic phenomena (146, 147).”
Towards Oxide Electronics: a Roadmap (2019, background): “The discovery of the existence of a high mobility and superconducting electron gas at interfaces between large band gap insulating oxides [4] is a clear example of the new ''opportunities that interfaces bring to Oxide Electronics" [5].”
Rational design of type-II nano-heterojunctions for nanoscale optoelectronics (2020, background): ““The interface is the device”, as Herbert Kroemer said in his Nobel Lecture, the semiconductor interface plays a crucial role in modern electronic and optoelectronic devices [1,2].”
Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology (2015, background): “While correlated electronic materials themselves show many emergent physical properties beyond traditional functional materials such as semiconductors, introduction of interfaces by well controlled manners, as done in thin films and heterostructures, provides an immense space for novel functionaliti”