Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
By Zheng Yang, C. Ko, Shriram Ramanathan. 2011
947 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/a07a3eca7f886b8f3721cfd810cb9be3915b0cfc
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Citations in the corpus
- Recent progresses on physics and applications of vanadium dioxide (2018, background): “Although it is still in debate whether the MIT in VO2 can be classified as a Mott transition, VO2 has nevertheless been explored as the channel material in the concept of Mott transistors [185-188].”
- Vanadium Dioxide as a Natural Disordered Metamaterial: Perfect Thermal Emission and Large Broadband Negative Differential Thermal Emittance (2013, neutral): “electronic switching devices [14] and also finds uses in”
- Optical absorbers based on strong interference in ultra‐thin films (2016, background): “VO2 is a widely studied correlated-electron material that features an insulator-metal phase transition (IMT) that can be triggered thermally (at around 70 °C), electrically, optically, or via application of stress [80] [81].”
- Spatiotemporal light control with active metasurfaces (2019, background): “(H) Optical nonlinearity enhanced by structural resonances can lead to ultrafast modulation of optical responses of a metasurface as well as frequency conversion. modulation of an ultrathin GST layer integrated with a goldmetasurface has been used to realize an all-optical metaswitch (Fig.”