Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
By Christina Schindler, G. Staikov, Rainer Waser. 2009
296 citations recorded by the source corpus.
Subfields: Cognitive Neuroscience, Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/82630dce07e623284afe95f076de6edddf7139c5
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In Electrical and Electronic Engineering
- Ilia Valov
- Michael N. Kozicki
- John R. Jameson
- Rainer Waser
- Daniele Ielmini
- Shimeng Yu
- H. Philip Wong
- Razali Ismail
In Polymers and Plastics
Citations in the corpus
- Electrochemical metallization memories—fundamentals, applications, prospects (2011, background): “Material systems in which an exponential dependence has been reported include Ag/GexSy /W [44], Ag/Ag2S/Pt [42], and Cu/SiO2/Pt [26] (though in the last case the SET speed was characterized using a linearly ramped voltage, which resulted in an exponential dependence between the sweep rate and the vo”