510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate

By T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, T. Mukai. 2009

257 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/7db13c54b54fca165eab63597f38ff925fc61099

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. R. Arif

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. Xiao-Hang Li
7. H. Tong
8. Ferdinand Scholz

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. Y. Ee
4. Ferdinand Scholz

Citations in the corpus

• III-Nitride Photonics (2010, background): “Note that the laser structure [66] was fabricated by employing both facets coated with high-reflectivity (HR) dielectric films (HR/HR), which reduces the mirror loss and threshold gain.”
• Semipolar GaN grown on foreign substrates: a review (2012, background): “Also green laser diodes, which only recently could be fabricated on conventional c-plane GaN wafers [3, 4], still show inferior properties as compared to shorter wavelength laser diodes (see also [5]).”