Fabrication and performance of GaN electronic devices

By S. Pearton, Fan Ren, A. Zhang, K. Lee. 2000

443 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/7d1680c8242cf3f46b3a9e81d4b9eea348fb8243

How researchers see this paper

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In Condensed Matter Physics

1. J. D. del Alamo
2. Jungwoo Joh

In Electrical and Electronic Engineering

1. J. D. del Alamo
2. Jungwoo Joh

Citations in the corpus

• Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, methodology): “The GaN hole mobility assumed in our model was 30 cm(2)/V · s [23].”