Band gaps and defect levels in functional oxides

By John Robertson, K. Xiong, S. Clark. 2006

165 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/79eab3f31eacf7242df2c7cd67ad4f69cbc34845

How researchers see this paper

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In Electrical and Electronic Engineering

1. K. Ellmer
2. D. Fleetwood
3. A. Bikowski

In Materials Chemistry

1. K. Ellmer
2. M. V. Ganduglia-Pirovano
3. D. Fleetwood
4. Joachim Sauer
5. A. Hofmann
6. A. Bikowski

Citations in the corpus

• Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, background): “7 eV (see [227]) and interpolating linearly between the values for the pure materials, the mobility limited by alloy scattering shown in figure 11 is obtained.”
• Oxygen vacancies in transition metal and rare earth oxides: Current state of understanding and remaining challenges (2007, background): “2 eV above the top of the valence band in m-ZrO2 [31], is likely to move if methods which do give more accurate band gaps are used [208].”
• $1/f$ Noise and Defects in Microelectronic Materials and Devices (2015, background): “These show that the neutral O vacancy has a gap state at a suitable level for metastable charge exchange with Si [179], making it a strong candidate for the dominant defect causing low frequency noise in MOS devices with gate dielectrics.”