Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

By R. Lai, X. Mei, W. Deal, W. Yoshida, Y. Kim, Po-Hsin Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange and 3 more. 2007 IEEE International Electron Devices Meeting, 2007

276 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/796c5768609d8b1b390dd3dc1fcaee74bfe91941

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Mohamed-Slim Alouini
2. Basem Shihada
3. Tadao Nagatsuma
4. Osama Amin
5. Frank Schwierz
6. Ho-Jin Song

In Condensed Matter Physics

1. J. D. del Alamo

In Electrical and Electronic Engineering

1. Mohamed-Slim Alouini
2. Basem Shihada
3. Osama Amin
4. Ho-Jin Song
5. Tadao Nagatsuma
6. Raed M. Shubair
7. Hadeel Elayan
8. Frank Schwierz

Citations in the corpus

• THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors (2011, background): “I N THE LAST few years, the development of THz transistor technologies [1] has pushed operating frequencies of amplifiers well into the sub-millimeter wave range.”
• 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz (2008, background): “4 shows fmax against fT for our InAs HEMTs, together with recent reports for several kinds of transistors [1]–[3], [5],”
• Present and Future of Terahertz Communications (2011, background): “Recently, compound semiconductor devices operating at up to 1 THz have been reported [26], [27], and even Si-CMOS technologies, which had been assumed not to be suitable for”
• Graphene Transistors: Status, Prospects, and Problems (2013, background): “The highest fmax data reported so far for graphene MOSFETs is in the range of 30–45 GHz only [87], [98], [99], compared to several hundreds of gigahertz for the competing FET types and a record fmax above 1 THz for an InP HEMT with 35-nm gate length [100].”
• Terahertz Band: The Last Piece of RF Spectrum Puzzle for Communication Systems (2019, background): “A significant milestone was the first InP HEMT with fmax > 1 THz reported in 2007 [64].”
• 120-GHz-Band Wireless Link Technologies for Outdoor 10-Gbit/s Data Transmission (2012, background): “of over 1 THz have already been developed [13].”