Robust memristors based on layered two-dimensional materials

By Miao Wang, S. Cai, Chen Pan, Chen-Yu Wang, X. Lian, Kang Xu, Tianjun Cao, Xiaoqing Pan, Baigeng Wang, S. Liang and 1 more. 2018

700 citations recorded by the source corpus.

Van der Waals heterostructures are formed by stacking layers of different two-dimensional materials and offer the possibility to design new materials with atomic-level precision. By combining the valuable properties of different 2D systems, such heterostructures could potentially be used to address existing challenges in the development of electronic devices, particularly those that require vertical multi-layered structures. Here we show that robust memristors with good thermal stability, which is lacking in traditional memristors, can be created from a van der Waals heterostructure composed of graphene/MoS2–xOx/graphene. The devices exhibit excellent switching performance with an endurance of up to 107 and a high operating temperature of up to 340 °C. With the help of in situ electron microscopy, we show that the thermal stability is due to the MoS2–xOx switching layer, as well as the graphene electrodes and the atomically sharp interface between the electrodes and the switching layer. We also show that the devices have a well-defined conduction channel and a switching mechanism that is based on the migration of oxygen ions. Finally, we demonstrate that the memristor devices can be fabricated on a polyimide substrate and exhibit good endurance against over 1,000 bending cycles, illustrating their potential for flexible electronic applications.Memristors that offer good thermal stability, which is lacking in traditional memristors, can be created from a van der Waals heterostructure composed of graphene/MoS2–xOx/graphene.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4a64d61bd3451f2df32507cdda058d20fbec7698

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In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

An artificial spiking afferent nerve based on Mott memristors for neurorobotics (2020, background): “Given the physical limit of transistors and their lack of desirable dynamics, memristors have attracted special attention owing to their high integration intensity 14 , low power consumption 15 , analog behavior 16 – 18 , and diffusive dynamics 13,19 – 21 , etc.”