Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

By Isabelle Ferain, C. Colinge, Jean-Pierre Colinge. Nature, 2011

968 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6de37d86e9dd2fa782a3261115b2f81597df274a

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In Electrical and Electronic Engineering

1. Kelin J. Kuhn
2. Bevan M. Baas
3. Aaron Stillmaker
4. Qiang Li
5. Kei May Lau

Citations in the corpus

• Electric double-layer transistors: a review of recent progress (2015, neutral): “Reproduced from [16]with permission fromNature PublishingGroup (Color figure online) 5644 J Mater Sci (2015) 50:5641–5673”
• Considerations for Ultimate CMOS Scaling (2012, background): “A generalized expression for λN can be written as λN = √ εSi Nεox · ToxTsi where εox is the electrical permittivity of the gate dielectric, εSi is the electrical permittivity of the channel, N is the number of gates (ETSOI = 1, GAA = 4), Tox is the gate dielectric thickness, and Tsi is the film thic”