Giant tunneling magnetoresistance effect in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions for read-head applications

By K. Tsunekawa, D. Djayaprawira, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, Shinji Yuasa, Yoshishige Suzuki, K. Ando. 2005

214 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/65e7fddb3c9a5e66063382e8a5ac3e65fec39a1d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. D. Ralph
2. Fumihiro Matsukura
3. Robert A. Buhrman
4. Shoji Ikeda
5. E. Ryan
6. S. Kiselev
7. I. Krivorotov
8. Jordan A. Katine

In Materials Chemistry

1. Fumihiro Matsukura
2. D. Ralph
3. G. Fuchs
4. Hideo Ohno
5. T. Dietl

Citations in the corpus

• Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “ratio of 230% for sputtered Co60Fe20B20/MgO/Co60Fe20B20 MTJs [64], [65], while Hayakawa et al.”
• Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, background): “3, much higher values of TMR can be achieved by using MgO tunnel barriers rather than AlOx, even for low RA tunnel barriers [82, 83].”