Silver incorporation in Ge-Se glasses used in programmable metallization cell devices
By M. Mitkova, Michael N. Kozicki. 2002
146 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/65e6e16e9bd7d29e34fccbb487fe36837e2c7515
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Nanoscale memory elements based on solid-state electrolytes (2005, background): “Ag-saturated composition has been confirmed by us in [5].”
- Cation-based resistance change memory (2013, unknown): “5 [39] TiO2 [40] Ag-GeSex [15, 37, 41] WO3 [42] Cu-doped SiO2 [43, 44] GeOx [45] Cu-doped WO3 [46] GeSx [47, 48] Cu-doped ZrO2 [49] GeSex [50, 51] Cu-TCNQ [52, 53] Cu-GeTe [54]”
- Electrochemical metallization memories—fundamentals, applications, prospects (2011, unknown): “Gex Sy W: [9, 87, 14, 49, 88, 48, 44, 95, 16] W: [87] Gex Sey W: [9, 49, 72, 50, 15, 43] W: [87] Pt: [51] Ni: [49, 45, 94, 96] Ge–Te TiW: [90] TaN: [38] GST Mo: [91] As–S Au: [89] Znx Cd1−x S Pt: [39, 93] Cu2S Pt: [36, 46, 35] Ti: [41]a, [58]b Ta2O5 Pt: [85, 36, 60] Ru: [86] SiO2 Co: [84] W: [52, 92”