Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

By Xuhong Hu, A. Koudymov, G. Simin, J. Yang, M. Khan, A. Tarakji, Michael S. Shur, R. Gaska. 2001

240 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/626f2ab54372360b0ca04ab9463f544c1cfe53f6

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Citations in the corpus

• Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film (2012, background): “current collapse [2], [4] in RF/microwave power amplifiers that typically require moderate drain bias voltage.”
• Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs (2008, background): “The high-dielectric constant of Ga2O3 (∼10) and its high quality allows the use of thinner layers than in the case of Si-based gate dielectrics (SiO2 or Si3N4) [7], [8].”