Performance projections for ballistic carbon nanotube field-effect transistors

By Jing Guo, Mark S. Lundstrom, Supriyo Datta. 2002

234 citations recorded by the source corpus.

The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance.

View Paper: https://www.semanticscholar.org/paper/6153c1e84551f21b434a727533c81b4fb15df2f1

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Citations in the corpus

• A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region (2007, background): “The simple coaxial or planer gate structures utilized in [7], [8], and [10] differ from the typical realistic CNFET gate structure that consists of high-k gate oxide on top of the SiO2 insulating bulk.”
• A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking (2007, methodology): “The model at this level is similar to the devicelevel models such as those in [8] and [9].”
• Ballistic carbon nanotube field-effect transistors (2003, background): “A key goal in transistor scaling is to maximize the saturation drain current for short channel and low voltage device”
• Carbon Nanotubes for High-Performance Electronics - Progress and Prospect (2008, unknown): “Today’s CNFETs reach transconductance values g m per tube in the 10–20 � S range [25], [26] with theoretically predicted values as high as � 60 � S for reasonably scaled gate capacitances [ 7 ].”
• AC performance of nanoelectronics: towards a ballistic THz nanotube transistor (2004, methodology): “A transconductance of 60 lS was recently predicted [13,14] by simulation.”