Charge transport in disordered graphene-based low dimensional materials

By A. Cresti, N. Nemec, B. Biel, G. Niebler, F. Triozon, Gianaurelio Cuniberti, S. Roche. 2008

290 citations recorded by the source corpus.

Two-dimensional graphene, carbon nanotubes, and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this review, we consider the transport properties of these materials, with particular emphasis on the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8c922e48856d042700eb83a5e2cd326e08c3edb4

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Citations in the corpus

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles (2020, background): “During the last decade numerous techniques have been proposed for the band gap opening in graphene, like the formation of point defects [12–16], patterned cuts [17,18],”
Electronic properties of mesoscopic graphene structures: Charge confinement and control of spin and charge transport (2011, background): “Nanoribbons may also have disordered [7] or more complicated regular types of edges [80].”
Band gap of strained graphene nanoribbons (2009, background): “GNRs present interesting transport properties where, for example, disorder such as imperfect edges, can play an important role [14].”
Strain effects in graphene and graphene nanoribbons: The underlying mechanism (2010, background): “Apart from its remarkable fundamental properties, graphene has attracted intensive interest in recent years as a promising candidate material for the new generation of electronics and spintronics [1, 2].”
Nanoporous C3N4, C3N5 and C3N6 nanosheets; novel strong semiconductors with low thermal conductivities and appealing optical/electronic properties (2020, background): “While graphene wonderful physics offer numerous possibilities to open a band gap by stretching [9,10], functionalization or doping [11–13] or formation of defects [14–16], but these methods necessitate rather elaborated post fabrication processes, resulting in substantial increase in the production ”