Screening Effect and Impurity Scattering in Monolayer Graphene(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

By T. Ando. 2006

610 citations recorded by the source corpus.

The static polarization function is calculated in two-dimensional graphite and used for the calculation of the conductivity limited by charged-impurity scattering. The conductivity increases in proportion to the electron concentration and the mobility remains independent of the Fermi energy, in qualitative agreement with experiments. The screening increases in proportion to temperature at sufficiently high temperatures in contrast to the behavior in conventional two-dimensional systems, leading to the mobility increase proportional to the square of temperature.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5c8a5910ecd82f0b56ea1fc6f721e0a78f20f559

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Citations in the corpus

Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices (2014, background): “The results of the weak-localization measurements also provide a clear indication as to which of the two sources of long-range disorder (charged impurities at the substrate surface [13,33,34] and random strain fluctuations in the graphene lattice [35]) plays the most relevant role.”
The electronic properties of graphene (2007, background): “(170)The lo al displa ements of the atoms in the unit ell anbe related to u(r) by (Ando, 2006a): (~δab · ∇)u = κ−1(uA − uB) , (171)where κ is a dimensionless quantity that depends on mi- ros opi details.”
Intrinsic and extrinsic performance limits of graphene devices on SiO2. (2007, background): “measuring the four-probe resistivity ρ(Vg,T) of graphene field-effect devices on SiO2/Si[2, 14] vs.”
Charged Impurity Scattering in Graphene (2007, background): “In addition, (7) the linear σ(Vg) curves extrapolate to a finite σres at Vg,min.”
Nobel Lecture: Graphene: Materials in the Flatland (2011, background): “Although the role of different scattering mechanisms is still debated (Ando and Nakanishi, 1998; Ando, 2006; Cheianov and Fal’ko, 2006b; Nomura and MacDonald, 2006; Ostrovsky et al., 2006; Peres et al., 2006; Adam et al., 2007; Nomura and MacDonald, 2007; Stauber et al., 2007; Chen et al., 2008;…”
Electronic transport in two-dimensional graphene (2010, methodology): “In addition, the finite temperature Thomas-Fermi wave vector in the q → 0 long wavelength limit is given by (Ando, 2006; Hwang and Das Sarma, 2009b) qs(T TF ) ≈ 8 ln(2)rskF ( T TF ) (3.10a) qs(T TF ) ≈ 4rskF [ 1− π 2 6 ( T TF )2] .”
Electronic properties of graphene in a strong magnetic field (2010, background): “(Ando, 2006b, 2007b), and ω̃0 ≃ ωph + 2 ~ ∫ Nc 0 dn ∆ng 2 A(n) ~2ω2ph −∆2n (197) is the physical phonon frequency at zero doping.”