Spin transfer switching in dual MgO magnetic tunnel junctions
By Z. Diao, A. Panchula, Yunfei Ding, M. Pakala, Shengyuan Wang, Zhanjie Li, Dmytro Apalkov, H. Nagai, Alexander Driskill-Smith, Lien-Chang Wang and 2 more. 2007
171 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/59999e8981b05a2ddb4ae9a786eaccc190c26fdc
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In Atomic and Molecular Physics, and Optics
- M. Chshiev
- Bernard Dieny
- Kyung-Jin Lee
- Alexander Driskill-Smith
- Vladimir Nikitin
- Eugene Chen
- Adrian Ong
- Steven Watts
In Condensed Matter Physics
- M. Chshiev
- Bernard Dieny
- Alexander Driskill-Smith
- Vladimir Nikitin
- Eugene Chen
- Adrian Ong
- Steven Watts
- Alexey Khvalkovskiy
In Materials Chemistry
Citations in the corpus
- Relaxing non-volatility for fast and energy-efficient STT-RAM caches (2011, methodology): “, that uses two pinned layers with MgO barriers and CoFeB magnetic materials to achieve an average Jc0 of 1MA/cm2, as compared to 2–3 MA/cm2 or more for single-barrier designs [9].”
- Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “In order to increase the spin-torque on the FL, a cell with a second MgO barrier was suggested [89, 90], referred to as a dual MTJ structure (or DMTJ), figure 16(b).”
- Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions (2009, background): “The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device application”