Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

By Wataru Saito, M. Kuraguchi, Y. Takada, K. Tsuda, Ichiro Omura, Tsuneo Ogura. IEEE Transactions on Electron Devices, 2005

147 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/5759e32b765d8d393573d7989ae0c20da069a18d

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In Condensed Matter Physics

1. J. D. del Alamo
2. Jungwoo Joh

In Electrical and Electronic Engineering

1. J. D. del Alamo
2. Jungwoo Joh

Citations in the corpus

• Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, background): “Although its origin is under debate, it seems to be induced by process damage—plasma and thermal—which generates nitrogen vacancies [18].”