Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering
By G. Gasiot, D. Giot, P. Roche. IEEE Transactions on Nuclear Science, 2007
148 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Hardware and Architecture
View Paper: https://www.semanticscholar.org/paper/56aea45245f7dda35bde56276d5e08d912fd29dd
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In Electrical and Electronic Engineering
In Hardware and Architecture
Citations in the corpus
- Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction (2013, background): “went on to model the impact of the location of the well contacts and found that closer proximity to the well contact reduced MCU likelihood [33].”