Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices

By Duncan R. Stewart, D. Ohlberg, P. Beck, Yong Chen, R. S. Williams, J. Jeppesen, K. Nielsen, J. Stoddart. 2004

325 citations recorded by the source corpus.

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The elusive memristor: properties of basic electrical circuits (2008, methodology): “It is easy to obtain a diversity of i–v characteristics using equations (6) and (7), including those presented in [9, 10] by choosing appropriate functional forms of v(t).”
Nanoionics-based resistive switching memories. (2007, methodology): “, a control experiment using electronically inactive alkanoic acids revealed a very similar I–V behaviou”
Practical Approach to Programmable Analog Circuits With Memristors (2009, unknown): “Memristive behavior is found in many different systems [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13] , [14], [15], [16], [17], [18], [19], [20].”
Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[19] Stewart DR, Ohlberg DAA, Beck PA, Chen Y, Williams RS, Jeppesen JO, et al.”
Electron transport in molecular junctions (2006, unknown): “, recent experiments suggest alternative mechanism”