Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy
By Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, Vitaliy Avrutin, N. Onojima, Chunli Liu, J. Xie, Q. Fan, Hadis Morkoç. 2005
143 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/4e3a85a0595d74284a31706ca0e1b62649ad94c2
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- ZnO-Based Ultraviolet Photodetectors (2010, methodology): “After that, Nakano et al. demonstrated the Schottky photodiodes consisting of a MgxZn1-xO (x ≤ 0.43) thin film and a transparent conducting polymer, poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) by MBE [103].”
- Investigation of a p-CuO/n-ZnO thin film heterojunction for H2 gas-sensor applications (2006, methodology): “3 eV and conductivities of about 10−7–10−3 S cm−1 [1, 2].”