Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x>0.69)

By Ryan G. Banal, M. Funato, Y. Kawakami. 2009

153 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/49c8c2570c64d93be45367bdc464b4013b9660d7

How researchers see this paper

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In Condensed Matter Physics

1. M. Kneissl
2. J. Rass
3. Akira Hirano
4. Matteo Meneghini
5. Hideki Hirayama
6. Ferdinand Scholz

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. J. Rass
3. Akira Hirano
4. Matteo Meneghini
5. Ferdinand Scholz

In Materials Chemistry

1. M. Kneissl
2. J. Rass
3. Ferdinand Scholz

Citations in the corpus

• The 2020 UV emitter roadmap (2020, background): “The use of thin QWs and high aluminium mole fraction barriers has been demonstrated to increase TE emission at a given wavelength [137, 138].”
• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, methodology): “Also, for the realization of high IQE DUV emission, the use of quaternary InAlGaN with a few percent of indium (In) is effective [2, 17].”