Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET

By N. Damrongplasit, Sung Hwan Kim, Tsu-Jae King Liu. IEEE Electron Device Letters, 2013

138 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/46f65efef4673ec1596dba3d4b008ddf76b3798b

How researchers see this paper

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In Electrical and Electronic Engineering

1. M. Jagadesh Kumar
2. S. Janardhanan
3. Mamidala Jagadesh Kumar
4. D. Abdi

Citations in the corpus

• Doping-Less Tunnel Field Effect Transistor: Design and Investigation (2013, background): “RDF, such as an unacceptably large increase in the OFF-state current, have recently been demonstrated in TFETs [16-19].”