Characterization of growth and crystallization processes in CoFeB /MgO/CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction

By Shinji Yuasa, Yoshishige Suzuki, T. Katayama, K. Ando. 2005

194 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/43f035170816c51739c68720a1863ed2cc00ad2e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Chshiev
2. Bernard Dieny
3. D. Ralph
4. Fumihiro Matsukura
5. Robert A. Buhrman
6. Shoji Ikeda
7. E. Ryan
8. S. Kiselev

In Electronic, Optical and Magnetic Materials

1. Fumihiro Matsukura
2. Shoji Ikeda
3. M. Chshiev
4. Bernard Dieny
5. D. Ralph
6. Hideo Ohno
7. T. Dietl

In Materials Chemistry

1. Fumihiro Matsukura
2. M. Chshiev
3. Bernard Dieny
4. D. Ralph
5. G. Fuchs
6. Hideo Ohno
7. T. Dietl

Citations in the corpus

• Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, background): “It has been shown that the MgO itself, which tends to grow bcc (001) with a rock-salt crystal structure, can actually template the CoFeB crystallization, which results in a very good lattice match [32].”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “CoFeB crystallization starts at the MgO interface and progresses throughout the CoFeB layer, and during the process B is gradually expelled (Yuasa et al., 2005).”
• Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “A pseudospin-valve MTJ, in which the CoFeB layers are designed to crystallize only from the interface between the MgO barrier, has been shown to exhibit a high TMR of 500% at Ta = 475 ◦C.”