Ge-on-Si laser operating at room temperature.

By Jifeng Liu, Xiaochen Sun, R. Camacho-Aguilera, Lionel C. Kimerling, Jürgen Michel. Optics Letters, 2010

868 citations recorded by the source corpus.

Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/41293015e75de47c0c2f069da444796a3dfa0bed

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. John E. Bowers
2. D. van Thourhout
3. Po Dong
4. Di Liang
5. Martijn J. R. Heck
6. Connie J. Chang-Hasnain
7. D. Thomson
8. Graham T. Reed

In Electrical and Electronic Engineering

1. John E. Bowers
2. Po Dong
3. Di Liang
4. D. van Thourhout
5. D. Thomson
6. Frederic Y. Gardes
7. Martijn J. R. Heck
8. Benjamin Schrauwen

In Materials Chemistry

1. John E. Bowers
2. D. van Thourhout
3. Di Liang
4. Martijn J. R. Heck

Citations in the corpus

• Nanolasers Grown on Silicon (2011, background): “Some approaches towards creating on-chip light sources for optical interconnects have focused on engineering silicon and germanium for optical gai”
• Hybrid Silicon Photonics for Optical Interconnects (2011, background): “Despite several attempts [15], [ 16 ], making an electrically pumped silicon-based laser with high enough efficiency is not possible yet.”
• Silicon photonic devices and integrated circuits (2014, background): “Today, practical Si-based light sources are still missing, despite the recent demonstration of a germanium laser [42].”
• Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler (2012, background): “Today, practical Si-based light sources are still missing, despite the recent demonstration of an optically pumped germanium laser [2].”
• DSENT - A Tool Connecting Emerging Photonics with Electronics for Opto-Electronic Networks-on-Chip Modeling (2012, background): “In this paper, we assume commercially available off-chip continuous wave lasers, though we note that integrated on-chip laser sources are also possible [10] [11]. b) Ring Resonators: The optical ring resonator is the primary component that enables on-chip wavelength division multiplexing (WDM).”
• Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate (2011, background): “Here, it should be mentioned that although an epitaxially grown GesSi laser operating at room temperature has recently been demonstrated, it was pumped opticall”
• Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon (2014, background): “Today, practical Si-based light sources are still missing, despite the recent promising demonstration of an optically pump ed germanium laser [4,5].”