Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

By Huiyun Liu, Ting Wang, Q. Jiang, R. Hogg, F. Tutu, Francesca Pozzi, A. Seeds. 2011

363 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9566c2be902ee4f43a8a77deb8b4323136dcfc9c

Citations in the corpus

• Silicon Photonics: The Next Fabless Semiconductor Industry (2013, neutral): “54 wIntEr 20 13 IEEE SOLID-STATE CIRCUITS MAGAZINE bonding [59], [60] and epitaxial growth [11] to transfer III-V materials to the silicon wafer.”
• Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, neutral): “The first operation of InAs QD lasers epitaxially grown on a Ge substrate was demonstrated in 2011 [101].”