Two-dimensional semiconductors with possible high room temperature mobility
By Wenxu Zhang, Zhishuo Huang, Wanli Zhang, Yanrong Li. Nano Reseach, 2014
734 citations recorded by the source corpus.
We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm2·V−1·s−1 at room temperature.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4ca380a573c484e5c3b6f8d50484333da77a2a8e
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition (2018, background): “Theoretical calculations also revealed that the room temperature phonon-limited electron mobility of monolayer WS2 can be as high as 1,103 cm2/(V·s) [15].”
- High quality atomically thin PtSe2 films grown by molecular beam epitaxy (2017, background): “However, its low mobility has limited applications, for instance, in high speed electronics [8, 9].”