Self-aligned carbon nanotube transistors with charge transfer doping

By Jia Chen, C. Klinke, A. Afzali, Phaedon Avouris. 2005

145 citations recorded by the source corpus.

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion∕Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3d56adcb3a2aae051384706bd41bc5503accba80

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements (2015, background): “performance and could be realized by heavily doping the source/drain (S/D) extensions [25].”
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking (2007, background): “A longer MFP, 20–50 nm, can be derived from the work in [17] with charge-transfer doping.”
Carbon-based electronics. (2007, background): “As well as this electrostatic approach, chemical approaches have also been successfu”
Circuit-Level Performance Benchmarking and Scalability Analysis of Carbon Nanotube Transistor Circuits (2009, background): “These include: 1) Doping1 variations in CNFET source and drain regions that cause nonlinear variations in drive current [1], [17], [18].”
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region (2007, methodology): “Considering both the fabrication feasibility [14] and superior device performance of the MOSFET-like CNFET as compared with the Schottky barrier (SB)-controlled FET, we choose to focus on the MOSFET-like CNFETs in this paper.”