Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

By A. Efremov, N. Bochkareva, R. Gorbunov, D. A. Lavrinovich, Y. Rebane, D. V. Tarkhin, Y. Shreter. 2006

226 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/24dd7ac2330247eb4c49b57020cb64a959c025aa

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Jing Zhang
4. Guangyu Liu
5. R. Arif

In Biomedical Engineering

1. Nelson Tansu
2. Guangyu Liu
3. Hongping Zhao

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. R. Arif
5. Jing Zhang
6. Y. Ee

Citations in the corpus

• Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, background): “Various possible explanations were proposed as the mechanism for the efficiency droop in high power nitride LEDs as follows: 1) decreased carrier localization at In-rich regions at high injection densities [1]; 2) carrier leakage [17]–[23]; 3) hole transport impediment and consequent electron leakag”