Defect states at III-V semiconductor oxide interfaces
By L. Lin, John Robertson. 2011
136 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/22d6d59c1f814303c95c1d65dee38c9bf0870182
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Considerations for Ultimate CMOS Scaling (2012, background): “Note that the states generated by group V dimers of In-containing compounds are predicted to lie inside the conduction band [176], which may explain the”