Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

By B. Haskell, Feng Wu, M. Craven, S. Matsuda, P. Fini, T. Fujii, K. Fujito, Steven P. DenBaars, J. Speck, Shuji Nakamura. 2003

185 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/210a5f8d23f623c0c23828958bff2f5d6743645a