Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

By B. Haskell, Feng Wu, S. Matsuda, M. Craven, P. Fini, Steven P. DenBaars, J. Speck, Shuji Nakamura. 2003

136 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/1e074a2294ba81e7bdc0ad1ebcdfe98fd898190f