Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

By V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, Kuan Yew Cheong, Sima Dimitrijev. 2003

189 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/1d7d247e952cad9f17efc616e60d0324bfaa5546

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In Electrical and Electronic Engineering

1. Zheng Chen

Citations in the corpus

• Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (2008, background): “[28] who found that the NO anneal reduced the number of slow electron traps that they attributed to defects located in the near-interfacial oxide layer.”
• Silica on Silicon Carbide (2008, unknown): “313 , 343 Secondly, a significant incorporation of nitrogen into the substrate/oxide interface has been observed 266 , 344 , 345 and has anisotropic behavior depending on the free crystal face 76 , 346 with a lower N-incorporation on the Si-face.”