Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions

By Yue Zhang, Weisheng Zhao, Y. Lakys, Jacques-Olivier Klein, Joo-Von Kim, Dafine Ravelosona, Claude Chappert. IEEE Transactions on Electron Devices, 2012

358 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b5cbabcec05d9a9efc6894bce402b94b3247bb10

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In Atomic and Molecular Physics, and Optics

1. V. Joshi
2. Weisheng Zhao
3. Jacques-Olivier Klein
4. Dafine Ravelosona
5. Yue Zhang
6. Zhaohao Wang
7. Wang Kang
8. Claude Chappert

In Electronic, Optical and Magnetic Materials

1. V. Joshi

In Materials Chemistry

1. V. Joshi

Citations in the corpus

• Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque (2015, methodology): “Also another 4 T/1MTJ memory cell [33] is demonstrated in figure 4(c) for the simulation of conventional STT switching.”
• Spintronics (2015, background): “Recent progress demonstrates that PMA materials (e.g., CoFeB) can further improve the storage density, access speed, and power consumption of the RM [Jung et al 2008; Fukami et al. 2011; Zhang et al. 2012a].”
• Spintronics: A contemporary review of emerging electronics devices (2016, methodology): “Based on hybrid combination of CMOS and MTJ, NV memory (magnetic flip-flop [44]) and NV logic have been developed [45].”