Theory of ferromagnetic (III, Mn) V semiconductors

By T. Jungwirth, J. Sinova, J. Masek, Jan Kucera, Allan H. MacDonald. 2006

956 citations recorded by the source corpus.

The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and post-growth treatment techniques have played a central role in the field, often pushing the limits of dilute Mn moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. In the review we focus on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magneto-transport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. The conclusions we arrive at are based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/548da09ee1ecec8b6e43244fa38efe530f4744c2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Anomalous hall effect (2009, methodology): “…for the band quasiparticles, rather than localized basis states appropriate for the localized regime (Berciu and Bhatt, 2001), provide the natural starting point for a model Hamiltonian which reproduces many of the observed experimental effects (Jungwirth et al., 2006; Sinova and Jungwirth, 2005).”
Ultrafast optical manipulation of magnetic order (2010, background): “In contrast, such an approach is ideally suited for materials, where most of the macroscopic magnetization comes from the localized d or f shell spins, while the exchange interaction between the spins is mediated via itinerant s carriers Jungwirth et al., 2006 .”
Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “…at evaluation of conductivity tensor components σi,j( ~M) in (Ga,Mn)As-type DFSs, developed in the lowest order in disorder for films of (Ga,Mn)As and related systems, was already reviewed vis-à vis results of extensive experimental studies (Jungwirth et al., 2008, 2006a; Nagaosa et al., 2010).”
Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, methodology): “…detailed discussions of the materials aspects of the research of (Ga,Mn)As in the context of the family of (III,Mn)V and other magnetic materials we refer to other comprehensive review articles (Dietl, 2003; Dietl and Ohno, 2013; Jungwirth et al., 2006b; Matsukura et al., 2002; Sato et al., 2010).”