Antimonide-based compound semiconductors for electronic devices: A review

By B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, M. Ancona. 2005

343 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/48800687c854e648e2b62a11c25c97e9954a3be8

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In Electrical and Electronic Engineering

1. J. D. del Alamo
2. Kei May Lau
3. Qiang Li

Citations in the corpus

• 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz (2008, methodology): “An alternative approach to InAs channel transistors is to use AlSb as barrier and cladding on top of a GaAs substrate [8].”