Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes

By C. Niclass, A. Rochas, P. Besse, E. Charbon. IEEE Journal of Solid-State Circuits, 2005

417 citations recorded by the source corpus.

Subfields: Biophysics, Electrical and Electronic Engineering, Instrumentation

View Paper: https://www.semanticscholar.org/paper/0a4207feb93d62873e24c015a7423b3bff33629a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biophysics

1. Gerald S. Buller
2. Robert John Collins
3. Steve Collins
4. Danial Chitnis
5. A. M. Wallace
6. Alberto Tosi
7. Franco Zappa
8. Simone Tisa

In Electrical and Electronic Engineering

1. Gerald S. Buller
2. Robert John Collins
3. Steve Collins
4. Danial Chitnis
5. A. M. Wallace
6. M. Gijs

In Instrumentation

1. Gerald S. Buller
2. Robert John Collins
3. Steve Collins
4. Danial Chitnis
5. A. M. Wallace

Citations in the corpus

• Progress in Silicon Single-Photon Avalanche Diodes (2007, background): “Such arrays can be hybrid [43] or monolithically integrated [27] with CMOS timing circuits.”
• Ranging and Three-Dimensional Imaging Using Time-Correlated Single-Photon Counting and Point-by-Point Acquisition (2007, methodology): “The technique of time-correlated single-photon counting (TCSPC) has been applied to these applications using somewhat different implementations [2]–[5].”
• Fluorescent magnetic bead and cell differentiation/counting using a CMOS SPAD matrix (2012, background): “The small variations in the photon count from the SPADs under uniform light are intrinsic noise, caused by different mechanisms [28].”
• Single-photon generation and detection (2009, methodology): “Arrayed silicon SPADs have found applications in fields such as 3D imaging [135] and astronomy [134] where they have the potential to reduce measurement durations.”
• STI-Bounded Single-Photon Avalanche Diode in a Deep-Submicrometer CMOS Technology (2006, background): “S INGLE-PHOTON avalanche diodes (SPADs) are used in a variety of applications, including biological [1], military [2], and biometric [3].”
• A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology (2007, background): “PDP outperformed our expectations, as measurements showed values in the range of previously reported SPADs in near-micrometer CMOS technologies [20]–[23], whose multiplication regions are wider and deeper.”
• Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology (2008, methodology): “Applications like quantum cryptography [9], profilometry of remote objects [ 10 ], and fluorescence spectroscopy [11], however, require both high sensitivity and fast response of the photodetector.”
• An overview of depth cameras and range scanners based on time-of-flight technologies (2016, neutral): “, a 1D array of 64 elements [45], 32×32 arrays [1,57], or a 128×128 array [46].”
• SPAD Figures of Merit for Photon-Counting, Photon-Timing, and Imaging Applications: A Review (2016, background): “Concerning the imaging performance, Table III reports the performance of SPAD arrays designed only for photon counting imaging applications as reported in [5], [17], [19], [21], [26]–[28], and [64]–[69].”
• A SPAD-Based Photon Detecting System for Optical Communications (2014, methodology): “Furthermore, this type of photodetector has been integrated into application specific integrated circuits for a range of applications, including laser range finding [6], three-dimensional imaging [7]–[9], fluorescence imag-”