STI-Bounded Single-Photon Avalanche Diode in a Deep-Submicrometer CMOS Technology
By H. Finkelstein, M. Hsu, S. Esener. IEEE Electron Device Letters, 2006
137 citations recorded by the source corpus.
Subfields: Biophysics, Instrumentation, Radiology, Nuclear Medicine and Imaging
View Paper: https://www.semanticscholar.org/paper/25944cd298d5ee8b0446b8762132b7dec72f75b4
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In Biophysics
In Instrumentation
Citations in the corpus
- A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology (2007, methodology): “For example, [35] reports the design of a SPAD fabricated in 0.”
- Progress in Silicon Single-Photon Avalanche Diodes (2007, methodology): “[23] reported a SPAD device fabricated in a low-voltage 0.”
- Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology (2011, background): “count was extremely high (hundreds of kilohertz) [11].”