Two‐Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks
By M. Osada, Tomoyuki Sasaki. Advances in Materials, 2012
1,003 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/07ddd14a8a3b8525fa41f3eda8046becdbc52b4c
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In Electrical and Electronic Engineering
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- Thomas Mikolajick
- Yi Cui
- I. Fina
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- J. Shan
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- J. MacManus‐Driscoll
In Materials Chemistry
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Citations in the corpus
- Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors (2018, background): “Highk dielectric oxide materials such as Al2O3 [11], HfO2 [4, 12], ZrO2 [8, 13] and Y2O3 [14] employed in the fabrication of gate insulators have numerous dangling bonds and large surface roughness.”
- Chemical and structural stability of 2D layered materials (2019, background): “61 1351–9 [21] Butler S Z et al 2013 Progress, challenges, and opportunities in two-dimensional materials beyond graphene ACS Nano 7 2898–926 [22] Zhang H 2015 Ultrathin two-dimensional nanomaterials ACS Nano 9 9451–69 [23] Osada M and Sasaki T 2012 Two-dimensional dielectric nanosheets: novel nanoe”
- Towards Oxide Electronics: a Roadmap (2019, positive): “Such approach has been successful for 2D hexagonal boron nitride (h-BN) as well as for 2D metal oxides [40,41], including perovskite-based oxides, that, so far, reported unique physical properties.”