Nanoscale imaging and control of resistance switching in VO2 at room temperature
By Jeehoon Kim, C. Ko, A. Frenzel, Shriram Ramanathan, Jennifer E. Hoffman. 2010
139 citations recorded by the source corpus.
We demonstrate controlled local phase switching of a VO2 film using a biased conducting atomic force microscope tip. After application of an initial, higher “training” voltage, the resistance transition is hysteretic with IV loops converging upon repeated voltage sweep. The threshold Vset to initiate the insulator-to-metal transition is on order ∼5 V at room temperature, and increases at low temperature. We image large variations in Vset from grain to grain. Our imaging technique opens up the possibility for an understanding of the microscopic mechanism of phase transition in VO2 as well as its potential relevance to solid state devices.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/fc131d41537d754d60ffaf57185091a09b9abb68
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In Electrical and Electronic Engineering
In Polymers and Plastics
Citations in the corpus
- Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, background): “Figure 6 demonstrates controlled local phase switching in VO2 thin films through use of a biased conducting AFM tip (106).”
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications (2011, background): “transition of VO2 occurs when a metallic current path is locally formed by structural phase change due to Joule heating [7], [9], [12].”